Two-step stress method for the dynamic testing of very thin (8 nm) SiO<inf>2</inf> films

R. Rodríguez; E. Miranda; M. Nafría; J. Suñé; X. Aymerich

doi:10.1016/S0026-2714(98)00142-5

Two-step stress method for the dynamic testing of very thin (8 nm) SiO<inf>2</inf> films

R. Rodríguez, E. Miranda, M. Nafría, J. Suñé, X. Aymerich

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

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Resumen

This work examines the use of a two-step electric test method which consists in applying a dynamic pre-stress followed by a static final stress (the same for the different pre-stresses) until breakdown. The method decreases the testing times under dynamic stress conditions and allows the comparison of the degradation introduced in the oxide for different types of pre-stress. Although the time-to-breakdown of the dynamically pre-stressed oxides measured during the final DC test is larger than the one measured in virgin oxides, the degradation is found to be a cumulative process. © 1998 Elsevier Science Ltd. All rights reserved.

Idioma original	Inglés
Páginas (desde-hasta)	1127-1131
Publicación	Microelectronics Reliability
Volumen	38
N.º	6-8
DOI	https://doi.org/10.1016/S0026-2714(98)00142-5
Estado	Publicada - 1 ene 1998

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@article{75e8097d64334d269d233f212aaa381f,

title = "Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films",

abstract = "This work examines the use of a two-step electric test method which consists in applying a dynamic pre-stress followed by a static final stress (the same for the different pre-stresses) until breakdown. The method decreases the testing times under dynamic stress conditions and allows the comparison of the degradation introduced in the oxide for different types of pre-stress. Although the time-to-breakdown of the dynamically pre-stressed oxides measured during the final DC test is larger than the one measured in virgin oxides, the degradation is found to be a cumulative process. {\textcopyright} 1998 Elsevier Science Ltd. All rights reserved.",

author = "R. Rodr{\'i}guez and E. Miranda and M. Nafr{\'i}a and J. Su{\~n}{\'e} and X. Aymerich",

year = "1998",

month = jan,

day = "1",

doi = "10.1016/S0026-2714(98)00142-5",

language = "English",

volume = "38",

pages = "1127--1131",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "6-8",

}

TY - JOUR

T1 - Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films

AU - Rodríguez, R.

AU - Miranda, E.

AU - Nafría, M.

AU - Suñé, J.

AU - Aymerich, X.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - This work examines the use of a two-step electric test method which consists in applying a dynamic pre-stress followed by a static final stress (the same for the different pre-stresses) until breakdown. The method decreases the testing times under dynamic stress conditions and allows the comparison of the degradation introduced in the oxide for different types of pre-stress. Although the time-to-breakdown of the dynamically pre-stressed oxides measured during the final DC test is larger than the one measured in virgin oxides, the degradation is found to be a cumulative process. © 1998 Elsevier Science Ltd. All rights reserved.

AB - This work examines the use of a two-step electric test method which consists in applying a dynamic pre-stress followed by a static final stress (the same for the different pre-stresses) until breakdown. The method decreases the testing times under dynamic stress conditions and allows the comparison of the degradation introduced in the oxide for different types of pre-stress. Although the time-to-breakdown of the dynamically pre-stressed oxides measured during the final DC test is larger than the one measured in virgin oxides, the degradation is found to be a cumulative process. © 1998 Elsevier Science Ltd. All rights reserved.

U2 - 10.1016/S0026-2714(98)00142-5

DO - 10.1016/S0026-2714(98)00142-5

M3 - Article

SN - 0026-2714

VL - 38

SP - 1127

EP - 1131

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 6-8

ER -

Two-step stress method for the dynamic testing of very thin (8 nm) SiO<inf>2</inf> films

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