Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field

G. Fedorov; P. Barbara; D. Smirnov; D. Jiḿnez; S. Roche

doi:10.1063/1.3360214

Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field

G. Fedorov, P. Barbara, D. Smirnov, D. Jiḿnez, S. Roche

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

18 Citas (Scopus)

Resumen

We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K′ subbands of the band structure of the nanotube. © 2010 American Institute of Physics.

Idioma original	Inglés
Número de artículo	132101
Publicación	Applied physics letters
Volumen	96
DOI	https://doi.org/10.1063/1.3360214
Estado	Publicada - 12 abr 2010

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title = "Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field",

abstract = "We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K′ subbands of the band structure of the nanotube. {\textcopyright} 2010 American Institute of Physics.",

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AU - Fedorov, G.

AU - Barbara, P.

AU - Smirnov, D.

AU - Jiḿnez, D.

AU - Roche, S.

PY - 2010/4/12

Y1 - 2010/4/12

N2 - We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K′ subbands of the band structure of the nanotube. © 2010 American Institute of Physics.

AB - We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K′ subbands of the band structure of the nanotube. © 2010 American Institute of Physics.

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JO - Applied physics letters

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Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field

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