Tunable Graphene-GaSe Dual Heterojunction Device

Wonjae Kim; Changfeng Li; Ferney A. Chaves; David Jiménez; Raul D. Rodriguez; Jannatul Susoma; Matthias A. Fenner; Harri Lipsanen; Juha Riikonen

doi:10.1002/adma.201504514

Tunable Graphene-GaSe Dual Heterojunction Device

Wonjae Kim, Changfeng Li, Ferney A. Chaves, David Jiménez, Raul D. Rodriguez, Jannatul Susoma, Matthias A. Fenner, Harri Lipsanen, Juha Riikonen

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

92 Citas (Scopus)

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© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.

Idioma original	Inglés
Páginas (desde-hasta)	1845-1852
Publicación	Advanced Materials
Volumen	28
DOI	https://doi.org/10.1002/adma.201504514
Estado	Publicada - 2 mar 2016

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@article{c11d9915cc574cffa27a1494d45f93dd,

title = "Tunable Graphene-GaSe Dual Heterojunction Device",

abstract = "{\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.",

keywords = "GaSe, Schottky, graphene, heterojunctions, two-dimensional materials",

author = "Wonjae Kim and Changfeng Li and Chaves, {Ferney A.} and David Jim{\'e}nez and Rodriguez, {Raul D.} and Jannatul Susoma and Fenner, {Matthias A.} and Harri Lipsanen and Juha Riikonen",

year = "2016",

month = mar,

day = "2",

doi = "10.1002/adma.201504514",

language = "English",

volume = "28",

pages = "1845--1852",

journal = "Advanced Materials",

issn = "0935-9648",

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T1 - Tunable Graphene-GaSe Dual Heterojunction Device

AU - Kim, Wonjae

AU - Li, Changfeng

AU - Chaves, Ferney A.

AU - Jiménez, David

AU - Rodriguez, Raul D.

AU - Susoma, Jannatul

AU - Fenner, Matthias A.

AU - Lipsanen, Harri

AU - Riikonen, Juha

PY - 2016/3/2

Y1 - 2016/3/2

N2 - © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.

AB - © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. A field-effect device based on dual graphene-GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.

KW - GaSe

KW - Schottky

KW - graphene

KW - heterojunctions

KW - two-dimensional materials

U2 - 10.1002/adma.201504514

DO - 10.1002/adma.201504514

M3 - Article

SN - 0935-9648

VL - 28

SP - 1845

EP - 1852

JO - Advanced Materials

JF - Advanced Materials

ER -

Tunable Graphene-GaSe Dual Heterojunction Device

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