Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures

Xavier Saura; Enrique Miranda; David Jiménez; Shibing Long; Ming Liu; Joan Marc Rafí; Francesca Campabadal; Jordi Suñé

doi:10.7567/JJAP.52.04CD06

Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures

Xavier Saura, Enrique Miranda, David Jiménez, Shibing Long, Ming Liu, Joan Marc Rafí, Francesca Campabadal, Jordi Suñé

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación

13 Citas (Scopus)

Idioma original	Inglés
Páginas (desde-hasta)	04CD06-1-04CD06-6
Publicación	Japanese Journal of Applied Physics
Volumen	52
N.º	4S
DOI	https://doi.org/10.7567/JJAP.52.04CD06
Estado	Publicada - 1 ene 2013

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10.7567/JJAP.52.04CD06

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AU - Rafí, Joan Marc

AU - Campabadal, Francesca

AU - Suñé, Jordi

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