Third-mode 48 MHz free-free beam resonator used as a RF balun

J. L. López; J. Giner; G. Murillo; F. Torres; E. Marigó; A. Uranga; G. Abadal; N. Barniol

doi:10.1016/j.mee.2009.11.079

Third-mode 48 MHz free-free beam resonator used as a RF balun

J. L. López, J. Giner, G. Murillo, F. Torres, E. Marigó, A. Uranga, G. Abadal, N. Barniol^*

^*Autor correspondiente de este trabajo

Universitat Autònoma de Barcelona (UAB)

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

2 Citas (Scopus)

Resumen

In this paper, we present a new functional MEMS device monolithically integrated in a CMOS technology which is capable to mechanically perform the function of a balun, i.e. convert electrical signals that are unbalanced (single ended) to balanced ones. The RF-MEMS device consists on a 3rd order lateral mode free-free beam with a 48 MHz resonance frequency. The resonator is electrically actuated and capacitively detected allowing a fully integrated system. Two electrode configurations allow the signal phase shift between the two outputs of the RF-CMOS-MEMS device.

Idioma original	Inglés
Páginas (desde-hasta)	1256-1258
Número de páginas	3
Publicación	Microelectronic Engineering
Volumen	87
N.º	5-8
DOI	https://doi.org/10.1016/j.mee.2009.11.079
Estado	Publicada - may 2010

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title = "Third-mode 48 MHz free-free beam resonator used as a RF balun",

abstract = "In this paper, we present a new functional MEMS device monolithically integrated in a CMOS technology which is capable to mechanically perform the function of a balun, i.e. convert electrical signals that are unbalanced (single ended) to balanced ones. The RF-MEMS device consists on a 3rd order lateral mode free-free beam with a 48 MHz resonance frequency. The resonator is electrically actuated and capacitively detected allowing a fully integrated system. Two electrode configurations allow the signal phase shift between the two outputs of the RF-CMOS-MEMS device.",

keywords = "CMOS-MEMS, Micromechanical baluns, Phase inversion, RF-MEMS",

author = "L{\'o}pez, {J. L.} and J. Giner and G. Murillo and F. Torres and E. Marig{\'o} and A. Uranga and G. Abadal and N. Barniol",

year = "2010",

month = may,

doi = "10.1016/j.mee.2009.11.079",

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AU - López, J. L.

AU - Giner, J.

AU - Murillo, G.

AU - Torres, F.

AU - Marigó, E.

AU - Uranga, A.

AU - Abadal, G.

AU - Barniol, N.

PY - 2010/5

Y1 - 2010/5

N2 - In this paper, we present a new functional MEMS device monolithically integrated in a CMOS technology which is capable to mechanically perform the function of a balun, i.e. convert electrical signals that are unbalanced (single ended) to balanced ones. The RF-MEMS device consists on a 3rd order lateral mode free-free beam with a 48 MHz resonance frequency. The resonator is electrically actuated and capacitively detected allowing a fully integrated system. Two electrode configurations allow the signal phase shift between the two outputs of the RF-CMOS-MEMS device.

AB - In this paper, we present a new functional MEMS device monolithically integrated in a CMOS technology which is capable to mechanically perform the function of a balun, i.e. convert electrical signals that are unbalanced (single ended) to balanced ones. The RF-MEMS device consists on a 3rd order lateral mode free-free beam with a 48 MHz resonance frequency. The resonator is electrically actuated and capacitively detected allowing a fully integrated system. Two electrode configurations allow the signal phase shift between the two outputs of the RF-CMOS-MEMS device.

KW - CMOS-MEMS

KW - Micromechanical baluns

KW - Phase inversion

KW - RF-MEMS

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VL - 87

SP - 1256

EP - 1258

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 5-8

ER -

Third-mode 48 MHz free-free beam resonator used as a RF balun

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