Successive oxide breakdown statistics: Correlation effects, reliability methodologies, and their limits

Jordi Suné; Ernest Y. Wu; Wing L. Lai

doi:10.1109/TED.2004.835986

Successive oxide breakdown statistics: Correlation effects, reliability methodologies, and their limits

Jordi Suné, Ernest Y. Wu, Wing L. Lai

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

38 Citas (Scopus)

Resumen

This paper deals with the statistics of successive oxide breakdown (BD) events in MOS devices. Correlation effects between these successive events are experimentally related to the statistics of BD current jumps, thus suggesting that they are related to lateral propagation of the BD path. The application of the successive BD theory to chip reliability assessment is discussed. Several failure criteria and the related reliability methodologies are considered and some of their limits are established. © 2004 IEEE.

Idioma original	Inglés
Páginas (desde-hasta)	1584-1592
Publicación	IEEE Transactions on Electron Devices
Volumen	51
N.º	10
DOI	https://doi.org/10.1109/TED.2004.835986
Estado	Publicada - 1 oct 2004

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title = "Successive oxide breakdown statistics: Correlation effects, reliability methodologies, and their limits",

abstract = "This paper deals with the statistics of successive oxide breakdown (BD) events in MOS devices. Correlation effects between these successive events are experimentally related to the statistics of BD current jumps, thus suggesting that they are related to lateral propagation of the BD path. The application of the successive BD theory to chip reliability assessment is discussed. Several failure criteria and the related reliability methodologies are considered and some of their limits are established. {\textcopyright} 2004 IEEE.",

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AU - Wu, Ernest Y.

AU - Lai, Wing L.

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N2 - This paper deals with the statistics of successive oxide breakdown (BD) events in MOS devices. Correlation effects between these successive events are experimentally related to the statistics of BD current jumps, thus suggesting that they are related to lateral propagation of the BD path. The application of the successive BD theory to chip reliability assessment is discussed. Several failure criteria and the related reliability methodologies are considered and some of their limits are established. © 2004 IEEE.

AB - This paper deals with the statistics of successive oxide breakdown (BD) events in MOS devices. Correlation effects between these successive events are experimentally related to the statistics of BD current jumps, thus suggesting that they are related to lateral propagation of the BD path. The application of the successive BD theory to chip reliability assessment is discussed. Several failure criteria and the related reliability methodologies are considered and some of their limits are established. © 2004 IEEE.

UR - https://www.scopus.com/pages/publications/5444270038

U2 - 10.1109/TED.2004.835986

DO - 10.1109/TED.2004.835986

M3 - Article

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SP - 1584

EP - 1592

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Successive oxide breakdown statistics: Correlation effects, reliability methodologies, and their limits

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