TY - BOOK
T1 - Stochastic resonance effect in binary STDP performed by RRAM devices
AU - Salvador, Emili
AU - Rodriguez, Rosana
AU - Martin-Martinez, Javier
AU - Crespo-Yepes, Albert
AU - Miranda, Enrique
AU - Nafria, Montserrat
AU - Rubio, Antonio
AU - Ntinas, Vasileios
AU - Sirakoulis, Georgios Ch
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022/11
Y1 - 2022/11
N2 - The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron synapse in neuromorphic architectures, can be better distinguished if a gaussian noise is added to the bias. The addition of noise allows to reach memristor conductances which are proportional to the overlap between pre- and post-synaptic pulses.
AB - The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron synapse in neuromorphic architectures, can be better distinguished if a gaussian noise is added to the bias. The addition of noise allows to reach memristor conductances which are proportional to the overlap between pre- and post-synaptic pulses.
KW - memristor
KW - neuromorphic systems
KW - resistive switching
KW - RRAM
KW - STDP
KW - Stochastic resonance
UR - http://www.scopus.com/inward/record.url?scp=85142926061&partnerID=8YFLogxK
U2 - 10.1109/NANO54668.2022.9928738
DO - 10.1109/NANO54668.2022.9928738
M3 - Proceeding
AN - SCOPUS:85142926061
SN - 978-1-6654-5226-7
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - Stochastic resonance effect in binary STDP performed by RRAM devices
ER -