SiO2 reliability in MOS devices: a nanometer scale approach using a Conductive Atomic Force Microscope

M. Nafría, M. Porti, X. Aymerich, Pandalai S.G. [Ed] (Editor/a)

Producción científica: Capítulo de libro › Capítulo › Investigación

Idioma original	Inglés
Título de la publicación alojada	Recent research developments in science and technology of semiconductors
Lugar de publicación	Kerala (IN)
Páginas	147-173
Número de páginas	26
Volumen	I
Edición	1
Estado	Publicada - 1 ene 2002

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title = "SiO2 reliability in MOS devices: a nanometer scale approach using a Conductive Atomic Force Microscope",

author = "M. Nafr{\'i}a and M. Porti and X. Aymerich and [Ed], \{Pandalai S.G.\}",

year = "2002",

month = jan,

day = "1",

language = "English",

isbn = "978-81-7895-070-9",

volume = "I",

pages = "147--173",

booktitle = "Recent research developments in science and technology of semiconductors",

edition = "1",

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TY - CHAP

T1 - SiO2 reliability in MOS devices: a nanometer scale approach using a Conductive Atomic Force Microscope

AU - Nafría, M.

AU - Porti, M.

AU - Aymerich, X.

A2 - [Ed], Pandalai S.G.

PY - 2002/1/1

Y1 - 2002/1/1

M3 - Chapter

SN - 978-81-7895-070-9

VL - I

SP - 147

EP - 173

BT - Recent research developments in science and technology of semiconductors

CY - Kerala (IN)

ER -