Simulation of the time-dependent breakdown characteristics of heavy-ion irradiated gate oxides using a mean-reverting Poisson-Gaussian process

E. Miranda; A. Cester; J. Suñé; A. Paccagnella; and G. Ghidini

doi:10.1109/TNS.2005.855808

Simulation of the time-dependent breakdown characteristics of heavy-ion irradiated gate oxides using a mean-reverting Poisson-Gaussian process

E. Miranda, A. Cester, J. Suñé, A. Paccagnella, and G. Ghidini

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación

1 Cita (Scopus)

Idioma original	Inglés
Páginas (desde-hasta)	1462-1467
Publicación	IEEE Transactions on Nuclear Science
Volumen	52
DOI	https://doi.org/10.1109/TNS.2005.855808
Estado	Publicada - 1 ene 2005

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10.1109/TNS.2005.855808

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AU - Miranda, E.

AU - Cester, A.

AU - Suñé, J.

AU - Paccagnella, A.

AU - Ghidini, and G.

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