Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

R. Rodriguez; A. Crespo-Yepes; X. Aymerich; M. Nafria; J. Martin-Martinez

doi:10.1016/j.microrel.2009.06.029

Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

R. Rodriguez, A. Crespo-Yepes, X. Aymerich, M. Nafria, J. Martin-Martinez

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

18 Citas (Scopus)

Resumen

The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the resistive switching phenomenon observed in MIM structures for memory applications are discussed. © 2009 Elsevier Ltd. All rights reserved.

Idioma original	Inglés
Páginas (desde-hasta)	1024-1028
Publicación	Microelectronics Reliability
Volumen	49
DOI	https://doi.org/10.1016/j.microrel.2009.06.029
Estado	Publicada - 1 sept 2009

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AU - Martin-Martinez, J.

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AB - The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the resistive switching phenomenon observed in MIM structures for memory applications are discussed. © 2009 Elsevier Ltd. All rights reserved.

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Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

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