Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
Alberto Rodriguez-Fernandez, Samuel Aldana, Francesca Campabadal, Jordi Sune, Enrique Miranda, Francisco Jimenez-Molinos, Juan Bautista Roldan, Mireia Bargallo Gonzalez
Profundice en los temas de investigación de 'Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices'. En conjunto forman una huella única.