Reliably straining suspended van der Waals heterostructures

Daniele Nazzari; Jakob Genser; Masiar Sistani; Maximilian G. Bartmann; Xavier Cartoixà; Riccardo Rurali; Walter M. Weber; Alois Lugstein

doi:10.1063/5.0166460

Reliably straining suspended van der Waals heterostructures

Daniele Nazzari, Jakob Genser, Masiar Sistani, Maximilian G. Bartmann, Xavier Cartoixà , Riccardo Rurali, Walter M. Weber, Alois Lugstein

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Resumen

2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cuttingedge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waals
heterostructures, greatly expanding their potential. Moreover, thanks to their excellent stretchability, strain can be used as a powerful control
knob to tune or boost many of their properties. Here, we present a novel method to reliably and repeatedly apply a high uniaxial tensile strain
to suspended van der Waals heterostructures. The reported device is engineered starting from a silicon-on-insulator substrate, allowing for
the realization of suspended silicon beams that can amplify the applied strain. The strain module functionality is demonstrated using singleand double-layer graphene layers stacked with a multilayered hexagonal boron nitride flake. The heterostructures can be uniaxially strained,
respectively, up to ∼1.2% and ∼1.8%.

Idioma original	Inglés
Número de artículo	111123
Número de páginas	7
Publicación	APL Materials
Volumen	11
N.º	11
DOI	https://doi.org/10.1063/5.0166460
Estado	Publicada - 1 nov 2023

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10.1063/5.0166460Licencia: CC BY

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title = "Reliably straining suspended van der Waals heterostructures",

abstract = "2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cuttingedge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waalsheterostructures, greatly expanding their potential. Moreover, thanks to their excellent stretchability, strain can be used as a powerful controlknob to tune or boost many of their properties. Here, we present a novel method to reliably and repeatedly apply a high uniaxial tensile strainto suspended van der Waals heterostructures. The reported device is engineered starting from a silicon-on-insulator substrate, allowing forthe realization of suspended silicon beams that can amplify the applied strain. The strain module functionality is demonstrated using singleand double-layer graphene layers stacked with a multilayered hexagonal boron nitride flake. The heterostructures can be uniaxially strained,respectively, up to ∼1.2% and ∼1.8%.",

author = "Daniele Nazzari and Jakob Genser and Masiar Sistani and Bartmann, {Maximilian G.} and Xavier Cartoix{\`a} and Riccardo Rurali and Weber, {Walter M.} and Alois Lugstein",

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AU - Nazzari, Daniele

AU - Genser, Jakob

AU - Sistani, Masiar

AU - Bartmann, Maximilian G.

AU - Cartoixà , Xavier

AU - Rurali, Riccardo

AU - Weber, Walter M.

AU - Lugstein, Alois

PY - 2023/11/1

Y1 - 2023/11/1

N2 - 2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cuttingedge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waalsheterostructures, greatly expanding their potential. Moreover, thanks to their excellent stretchability, strain can be used as a powerful controlknob to tune or boost many of their properties. Here, we present a novel method to reliably and repeatedly apply a high uniaxial tensile strainto suspended van der Waals heterostructures. The reported device is engineered starting from a silicon-on-insulator substrate, allowing forthe realization of suspended silicon beams that can amplify the applied strain. The strain module functionality is demonstrated using singleand double-layer graphene layers stacked with a multilayered hexagonal boron nitride flake. The heterostructures can be uniaxially strained,respectively, up to ∼1.2% and ∼1.8%.

AB - 2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cuttingedge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waalsheterostructures, greatly expanding their potential. Moreover, thanks to their excellent stretchability, strain can be used as a powerful controlknob to tune or boost many of their properties. Here, we present a novel method to reliably and repeatedly apply a high uniaxial tensile strainto suspended van der Waals heterostructures. The reported device is engineered starting from a silicon-on-insulator substrate, allowing forthe realization of suspended silicon beams that can amplify the applied strain. The strain module functionality is demonstrated using singleand double-layer graphene layers stacked with a multilayered hexagonal boron nitride flake. The heterostructures can be uniaxially strained,respectively, up to ∼1.2% and ∼1.8%.

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Reliably straining suspended van der Waals heterostructures

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