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Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

E. Chávez-Ángel, J. S. Reparaz, J. Gomis-Bresco, M. R. Wagner, J. Cuffe, B. Graczykowski, A. Shchepetov, H. Jiang, M. Prunnila, J. Ahopelto, F. Alzina, C. M. Sotomayor Torres

    Producción científica: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

    Resumen

    We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality. © 2014 Author(s).
    Idioma originalInglés
    Número de artículo012113
    PublicaciónAPL Materials
    Volumen2
    N.º1
    DOI
    EstadoPublicada - 1 ene 2014

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