Quantum-size effects in hafnium-oxide resistive switching

Shibing Long; Xiaojuan Lian; Carlo Cagli; Xavier Cartoixà; Riccardo Rurali; Enrique Miranda; David Jiménez; Luca Perniola; Ming Liu; Jordi Suñé

doi:10.1063/1.4802265

Quantum-size effects in hafnium-oxide resistive switching

Shibing Long, Xiaojuan Lian, Carlo Cagli, Xavier Cartoixà, Riccardo Rurali, Enrique Miranda, David Jiménez, Luca Perniola, Ming Liu, Jordi Suñé

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

160 Citas (Scopus)

Resumen

Discrete changes of conductance of the order of G0 2e 2/h reported during the unipolar reset transitions of Pt/HfO 2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single- to few-atom diameters behave as QWs and are capable of carrying current with G0 conductance. © 2013 AIP Publishing LLC.

Idioma original	Inglés
Número de artículo	183505
Publicación	Applied physics letters
Volumen	102
DOI	https://doi.org/10.1063/1.4802265
Estado	Publicada - 6 may 2013

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title = "Quantum-size effects in hafnium-oxide resistive switching",

abstract = "Discrete changes of conductance of the order of G0 2e 2/h reported during the unipolar reset transitions of Pt/HfO 2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single- to few-atom diameters behave as QWs and are capable of carrying current with G0 conductance. {\textcopyright} 2013 AIP Publishing LLC.",

author = "Shibing Long and Xiaojuan Lian and Carlo Cagli and Xavier Cartoix{\`a} and Riccardo Rurali and Enrique Miranda and David Jim{\'e}nez and Luca Perniola and Ming Liu and Jordi Su{\~n}{\'e}",

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month = may,

day = "6",

doi = "10.1063/1.4802265",

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AU - Long, Shibing

AU - Lian, Xiaojuan

AU - Cagli, Carlo

AU - Cartoixà, Xavier

AU - Rurali, Riccardo

AU - Miranda, Enrique

AU - Jiménez, David

AU - Perniola, Luca

AU - Liu, Ming

AU - Suñé, Jordi

PY - 2013/5/6

Y1 - 2013/5/6

N2 - Discrete changes of conductance of the order of G0 2e 2/h reported during the unipolar reset transitions of Pt/HfO 2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single- to few-atom diameters behave as QWs and are capable of carrying current with G0 conductance. © 2013 AIP Publishing LLC.

AB - Discrete changes of conductance of the order of G0 2e 2/h reported during the unipolar reset transitions of Pt/HfO 2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single- to few-atom diameters behave as QWs and are capable of carrying current with G0 conductance. © 2013 AIP Publishing LLC.

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DO - 10.1063/1.4802265

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied physics letters

JF - Applied physics letters

M1 - 183505

ER -

Quantum-size effects in hafnium-oxide resistive switching

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