Proceedings of the 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97): Field induced oxidation of silicon by SPM: Study of the mechanism at negative sample voltage by STM, ESTM and AFM.: 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97)

F Pérez; G Abadal; N Barniol; X Aymerich

Proceedings of the 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97): Field induced oxidation of silicon by SPM: Study of the mechanism at negative sample voltage by STM, ESTM and AFM. 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97)

F Pérez, G Abadal, N Barniol, X Aymerich

Producción científica: Informe/libro › Libro de Actas › Investigación

Idioma original	Inglés
Lugar de publicación	Hamburg, Alemania (DE)
Número de páginas	1
Estado	Publicada - jul 1997

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Pérez, F., Abadal, G., Barniol, N., & Aymerich, X. (1997). Proceedings of the 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97): Field induced oxidation of silicon by SPM: Study of the mechanism at negative sample voltage by STM, ESTM and AFM. 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97).

Pérez, F ; Abadal, G ; Barniol, N et al. / Proceedings of the 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97): Field induced oxidation of silicon by SPM: Study of the mechanism at negative sample voltage by STM, ESTM and AFM. 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97). Hamburg, Alemania (DE), 1997. 1 p.

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Pérez, F, Abadal, G, Barniol, N & Aymerich, X 1997, Proceedings of the 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97): Field induced oxidation of silicon by SPM: Study of the mechanism at negative sample voltage by STM, ESTM and AFM. 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97). Hamburg, Alemania (DE).

Proceedings of the 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97): Field induced oxidation of silicon by SPM: Study of the mechanism at negative sample voltage by STM, ESTM and AFM. 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97). / Pérez, F; Abadal, G; Barniol, N et al.
Hamburg, Alemania (DE), 1997. 1 p.

Producción científica: Informe/libro › Libro de Actas › Investigación

TY - BOOK

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T2 - 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97)

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AU - Abadal, G

AU - Barniol, N

AU - Aymerich, X

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BT - Proceedings of the 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97): Field induced oxidation of silicon by SPM: Study of the mechanism at negative sample voltage by STM, ESTM and AFM.

CY - Hamburg, Alemania (DE)

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Pérez F, Abadal G, Barniol N, Aymerich X. Proceedings of the 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97): Field induced oxidation of silicon by SPM: Study of the mechanism at negative sample voltage by STM, ESTM and AFM. 9th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM 97). Hamburg, Alemania (DE), 1997. 1 p.