Post-breakdown current in MOS structures: extraction of parameters using the Integral difference function method

E. Miranda, A. Ortiz-Conde, F. García-Sánchez, E. Farkas-Sosa

Producción científica: Contribución a una revista › Artículo › Investigación

2 Citas (Scopus)

Idioma original	Inglés
Páginas (desde-hasta)	190-196
Publicación	IEEE Transactions on Device and Materials Reliability
Volumen	6
N.º	2
DOI	https://doi.org/10.1109/TDMR.2006.876563
Estado	Publicada - 1 ene 2006

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