Physical model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides

Enrique Alberto Miranda Castellano, A. Avellán, D. Schroeder, W. Krautschneider

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@article{43cb0f6235e4400387a4c1026dc502c9,

title = "Physical model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides",

author = "{Miranda Castellano}, {Enrique Alberto} and A. Avell{\'a}n and D. Schroeder and W. Krautschneider",

year = "2005",

month = jan,

day = "1",

language = "English",

volume = "97",

pages = "------",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Physical model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides

AU - Miranda Castellano, Enrique Alberto

AU - Avellán, A.

AU - Schroeder, D.

AU - Krautschneider, W.

PY - 2005/1/1

Y1 - 2005/1/1

M3 - Article

SN - 0021-8979

VL - 97

SP - ---

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -