TY - JOUR
T1 - Optimization of the close-to-carrier Phase Noise in a CMOS-MEMS oscillator using a Phase Tunable Sustaining-Amplifier
AU - Sobreviela, Guillermo
AU - Riverola, Martin
AU - Torres, Francesc
AU - Uranga, Arantxa
AU - Barniol, Nuria
PY - 2017/5/1
Y1 - 2017/5/1
N2 - © 2017 IEEE. In this paper, the phase noise of a 24-MHz complimentary metal-oxide-semiconductor microelectromechanical systems (CMOS-MEMS) oscillator with zero-level vacuum package is studied. We characterize and analyze the nonlinear regime of each one of the modules that compose the oscillator (CMOS sustaining-amplifier and MEMS resonator). As we show, the presented resonator exhibits a high nonlinear behavior. Such a fact is exploited as a mechanism to stabilize the oscillation amplitude, allowing us to maintain the sustaining-amplifier working in the linear regime. Consequently, the nonlinear resonator becomes the main close-to-carrier phase noise source. The sustaining amplifier, which functions as a phase shifter, was developed such that MEMS operation point optimization could be achieved without an increase in circuitry modules. Therefore, the system saves on area and power, and is able to improve the phase noise 26 dBc/Hz (at 1-kHz carrier frequency offset).
AB - © 2017 IEEE. In this paper, the phase noise of a 24-MHz complimentary metal-oxide-semiconductor microelectromechanical systems (CMOS-MEMS) oscillator with zero-level vacuum package is studied. We characterize and analyze the nonlinear regime of each one of the modules that compose the oscillator (CMOS sustaining-amplifier and MEMS resonator). As we show, the presented resonator exhibits a high nonlinear behavior. Such a fact is exploited as a mechanism to stabilize the oscillation amplitude, allowing us to maintain the sustaining-amplifier working in the linear regime. Consequently, the nonlinear resonator becomes the main close-to-carrier phase noise source. The sustaining amplifier, which functions as a phase shifter, was developed such that MEMS operation point optimization could be achieved without an increase in circuitry modules. Therefore, the system saves on area and power, and is able to improve the phase noise 26 dBc/Hz (at 1-kHz carrier frequency offset).
KW - MEMS oscillator
KW - MEMS resonator
KW - Microelectromechanical systems (MEMS) on complimentary metal-oxide-semiconductor (CMOS)
KW - nonlinear MEMS
KW - phase noise
KW - RF MEMS
UR - https://www.scopus.com/pages/publications/85019993435
U2 - 10.1109/TUFFC.2017.2667881
DO - 10.1109/TUFFC.2017.2667881
M3 - Article
SN - 0885-3010
VL - 64
SP - 888
EP - 897
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 5
M1 - 7851036
ER -