Optical investigation of CdSe/ZnSe quantum nanostructures

M. Ya Valakh, S. V. Ivanov, N. Mestres, J. Pascual, T. V. Shubina, S. V. Sorokin, V. V. Streltchuk, G. Pozina, B. Monemar

Producción científica: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

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Resumen

We have used resonant and non-resonant Raman scattering as well as photoluminescence and cathodoluminescence experiments to study the structure and composition properties of CdxZn1-xSe formed by migration enhanced epitaxy of CdSe layers on ZnSe buffers. The spectral change of the photoluminescence maximum correlates with the increase of the Cd content, depending on the nominal CdSe thickness in the 1.5-3.0 ML range. The inhomogeneous broadening of the photoluminescence band is caused by the composition difference between the two-dimensional mixed CdxZn1-xSe layer and the inserted islands with larger Cd concentration. This is confirmed by phonon frequency changes in resonant Raman scattering for samples with different nominal CdSe thicknesses as well as in Stokes and anti-Stokes frequency changes observed in the 1.5 ML sample. Attention is paid to the role of defects on Raman scattering and photoluminescence for the 3.15 ML sample.
Idioma originalInglés
Páginas (desde-hasta)173-177
PublicaciónSemiconductor Science and Technology
Volumen17
DOI
EstadoPublicada - 1 feb 2002

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