On the oscillatory structure in MIM tunnel conductance

X. Aymerich-Humet; F. Serra-Mestres

doi:10.1016/0038-1098(80)90385-3

On the oscillatory structure in MIM tunnel conductance

X. Aymerich-Humet, F. Serra-Mestres

Departamento de Física

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

6 Citas (Scopus)

Resumen

Oscillations in the MIM conductance derivative versus bias voltage due to impurity levels in the insulator are analysed by means of a stationary resonance model recently proposed by the authors. Current sensitivity and oscillation shape are determined, emphasizing their temperature dependence. From these results and taking into account the oscillation asymmetry, the position of the impurity level is obtained. The results are in agreement with experimental data on Al-Al2O3-Pd structures. © 1980, All rights reserved.

Idioma original	Inglés
Páginas (desde-hasta)	551-553
Publicación	Solid State Communications
Volumen	36
DOI	https://doi.org/10.1016/0038-1098(80)90385-3
Estado	Publicada - 1 ene 1980

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title = "On the oscillatory structure in MIM tunnel conductance",

abstract = "Oscillations in the MIM conductance derivative versus bias voltage due to impurity levels in the insulator are analysed by means of a stationary resonance model recently proposed by the authors. Current sensitivity and oscillation shape are determined, emphasizing their temperature dependence. From these results and taking into account the oscillation asymmetry, the position of the impurity level is obtained. The results are in agreement with experimental data on Al-Al2O3-Pd structures. {\textcopyright} 1980, All rights reserved.",

author = "X. Aymerich-Humet and F. Serra-Mestres",

year = "1980",

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day = "1",

doi = "10.1016/0038-1098(80)90385-3",

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journal = "Solid State Communications",

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T1 - On the oscillatory structure in MIM tunnel conductance

AU - Aymerich-Humet, X.

AU - Serra-Mestres, F.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - Oscillations in the MIM conductance derivative versus bias voltage due to impurity levels in the insulator are analysed by means of a stationary resonance model recently proposed by the authors. Current sensitivity and oscillation shape are determined, emphasizing their temperature dependence. From these results and taking into account the oscillation asymmetry, the position of the impurity level is obtained. The results are in agreement with experimental data on Al-Al2O3-Pd structures. © 1980, All rights reserved.

AB - Oscillations in the MIM conductance derivative versus bias voltage due to impurity levels in the insulator are analysed by means of a stationary resonance model recently proposed by the authors. Current sensitivity and oscillation shape are determined, emphasizing their temperature dependence. From these results and taking into account the oscillation asymmetry, the position of the impurity level is obtained. The results are in agreement with experimental data on Al-Al2O3-Pd structures. © 1980, All rights reserved.

UR - https://www.scopus.com/pages/publications/0019081547

U2 - 10.1016/0038-1098(80)90385-3

DO - 10.1016/0038-1098(80)90385-3

M3 - Article

SN - 0038-1098

VL - 36

SP - 551

EP - 553

JO - Solid State Communications

JF - Solid State Communications

ER -

On the oscillatory structure in MIM tunnel conductance

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