Nanomechanical switches based on metal-insulator-metal capacitors from a standard complementary-metal-oxide semiconductor technology

J. L. Muñoz-Gamarra*, A. Uranga, N. Barniol

*Autor correspondiente de este trabajo

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15 Citas (Scopus)

Resumen

We report experimental demonstrations of contact-mode nano- electromechanical switches obtained using a capacitor module based on metal-insulator-metal configuration of a standard commercial complementary metal oxide semiconductor technology. The developed 2 terminals Titanium Nitride switches operate at low voltages (∼10 V) thanks to its small gap (27 nm), showing an excellent ION/IOFF ratio (104) and abrupt behavior (5 mV/decade, one decade of current change is achieved with a 5 mV voltage variation). A switch configuration is also presented where using two electrodes three different contact mode states can be obtained, adding functionalities to mechanical switches configurations.

Idioma originalInglés
Número de artículo243105
PublicaciónApplied physics letters
Volumen104
N.º24
DOI
EstadoPublicada - 16 jun 2014

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