Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Keyphrases

• High Density 100%
• Non-volatile Memory 100%
• Information Storage 100%
• Heterostructure 100%
• Information Density 100%
• Ferroelectric Resistive Switching 100%
• Multilevel Recording 100%
• FeO3 100%
• BI-1 66%
• Well-defined 33%
• Switching Phenomenon 33%
• Compliance Current 33%
• Capacitors 33%
• Resistive State 33%
• Ferroelectric Domains 33%
• Multilevel Storage 33%
• Schottky Barrier Height 33%
• SrRuO3 33%
• Voltage Compliance 33%
• Program Schemes 33%

Material Science

• Heterojunction 100%
• Bismuth Ferrite 100%
• Density 100%
• Ferroelectric Material 100%
• Capacitor 33%
• Schottky Barrier 33%

Engineering

• Resistive 100%
• Heterostructures 100%
• Nonvolatile Memory 100%
• Schottky Barrier 50%
• Barrier Height 50%