Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

David Jiménez; Enrique Miranda; Atsushi Tsurumaki-Fukuchi; Hiroyuki Yamada; Jordi Suñé; Akihito Sawa

doi:10.1063/1.4855155

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

David Jiménez, Enrique Miranda, Atsushi Tsurumaki-Fukuchi, Hiroyuki Yamada, Jordi Suñé, Akihito Sawa

Departamento de Ingeniería Electrónica

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22 Citas (Scopus)

Resumen

We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. © 2013 AIP Publishing LLC.

Idioma original	Inglés
Número de artículo	263502
Publicación	Applied physics letters
Volumen	103
DOI	https://doi.org/10.1063/1.4855155
Estado	Publicada - 23 dic 2013

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title = "Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories",

abstract = "We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. {\textcopyright} 2013 AIP Publishing LLC.",

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day = "23",

doi = "10.1063/1.4855155",

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Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories. / Jiménez, David ; Miranda, Enrique; Tsurumaki-Fukuchi, Atsushi et al.
En: Applied physics letters, Vol. 103, 263502, 23.12.2013.

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

TY - JOUR

T1 - Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

AU - Jiménez, David

AU - Miranda, Enrique

AU - Tsurumaki-Fukuchi, Atsushi

AU - Yamada, Hiroyuki

AU - Suñé, Jordi

AU - Sawa, Akihito

PY - 2013/12/23

Y1 - 2013/12/23

N2 - We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. © 2013 AIP Publishing LLC.

AB - We demonstrate the feasibility of multilevel recording in Pt/Bi 1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi 1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory. © 2013 AIP Publishing LLC.

U2 - 10.1063/1.4855155

DO - 10.1063/1.4855155

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied physics letters

JF - Applied physics letters

M1 - 263502

ER -

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

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