Modeling the post-breakdown current in MOS devices on p-silicon substrate

A. Ortiz-Conde; E. Miranda; F. J. García Sanchéz; E. Farkas; S. Malobabic

doi:10.1109/ICCDCS.2006.250828

Modeling the post-breakdown current in MOS devices on p-silicon substrate

A. Ortiz-Conde^*, E. Miranda, F. J. García Sanchéz, E. Farkas, S. Malobabic

^*Autor correspondiente de este trabajo

Departamento de Ingeniería Electrónica

Universidad Simón Bolívar (Venezuela)

Producción científica: Capítulo de libro › Capítulo › Investigación › revisión exhaustiva

3 Citas (Scopus)

Resumen

A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization.

Idioma original	Inglés
Título de la publicación alojada	2006 International Caribbean Conference on Devices, Circuits and Systems
Páginas	13-16
Número de páginas	4
DOI	https://doi.org/10.1109/ICCDCS.2006.250828
Estado	Publicada - 2006

Serie de la publicación

Nombre	Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest

Acceder al documento

10.1109/ICCDCS.2006.250828

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Ortiz-Conde, A., Miranda, E., García Sanchéz, F. J., Farkas, E., & Malobabic, S. (2006). Modeling the post-breakdown current in MOS devices on p-silicon substrate. En 2006 International Caribbean Conference on Devices, Circuits and Systems (pp. 13-16). (Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest). https://doi.org/10.1109/ICCDCS.2006.250828

Ortiz-Conde, A. ; Miranda, E. ; García Sanchéz, F. J. et al. / Modeling the post-breakdown current in MOS devices on p-silicon substrate. 2006 International Caribbean Conference on Devices, Circuits and Systems. 2006. pp. 13-16 (Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest).

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title = "Modeling the post-breakdown current in MOS devices on p-silicon substrate",

abstract = "A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization.",

keywords = "Metal-oxide-semiconductor, Oxide breakdown, Reliability",

author = "A. Ortiz-Conde and E. Miranda and {Garc{\'i}a Sanch{\'e}z}, {F. J.} and E. Farkas and S. Malobabic",

year = "2006",

doi = "10.1109/ICCDCS.2006.250828",

language = "English",

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Ortiz-Conde, A, Miranda, E, García Sanchéz, FJ, Farkas, E & Malobabic, S 2006, Modeling the post-breakdown current in MOS devices on p-silicon substrate. En 2006 International Caribbean Conference on Devices, Circuits and Systems. Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest, pp. 13-16. https://doi.org/10.1109/ICCDCS.2006.250828

Modeling the post-breakdown current in MOS devices on p-silicon substrate. / Ortiz-Conde, A.; Miranda, E.; García Sanchéz, F. J. et al.
2006 International Caribbean Conference on Devices, Circuits and Systems. 2006. p. 13-16 (Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest).

Producción científica: Capítulo de libro › Capítulo › Investigación › revisión exhaustiva

TY - CHAP

T1 - Modeling the post-breakdown current in MOS devices on p-silicon substrate

AU - Ortiz-Conde, A.

AU - Miranda, E.

AU - García Sanchéz, F. J.

AU - Farkas, E.

AU - Malobabic, S.

PY - 2006

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AB - A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization.

KW - Metal-oxide-semiconductor

KW - Oxide breakdown

KW - Reliability

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Ortiz-Conde A, Miranda E, García Sanchéz FJ, Farkas E, Malobabic S. Modeling the post-breakdown current in MOS devices on p-silicon substrate. En 2006 International Caribbean Conference on Devices, Circuits and Systems. 2006. p. 13-16. (Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest). doi: 10.1109/ICCDCS.2006.250828

Modeling the post-breakdown current in MOS devices on p-silicon substrate

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