Modeling the conduction characteristics of broken down gate oxides in MOS structures

    Producción científica: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

    13 Citas (Scopus)

    Resumen

    We present an analytic model for the post-breakdown conduction through thin gate oxides in MOS structures. The breakdown paths across the oxide film are considered to behave as mesoscopic quantum point contacts in which discrete transverse energy levels arise as a consequence of the lateral confinement of the electrons' wave functions. In the longitudinal direction, such levels are viewed by the incoming electrons as effective potential barriers which can act as transmitting or backscattering conduction channels. We show that the existence of these levels gives rise to the so-called nonlinear conduction regime. © 2000 Elsevier Science Ltd. All rights reserved.
    Idioma originalInglés
    Páginas (desde-hasta)1599-1603
    PublicaciónMicroelectronics Reliability
    Volumen40
    N.º8-10
    EstadoPublicada - 1 dic 2000

    Huella

    Profundice en los temas de investigación de 'Modeling the conduction characteristics of broken down gate oxides in MOS structures'. En conjunto forman una huella única.

    Citar esto