Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

A. Conde, D. Jiménez, E. Miranda, JM Rafi, F. Campabadal, J. Suñé, Carme Martinez Domingo

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@article{544ae6cd764c4ade90d3212ac5719c67,

title = "Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition",

author = "A. Conde and D. Jim{\'e}nez and E. Miranda and JM Rafi and F. Campabadal and J. Su{\~n}{\'e} and {Martinez Domingo}, Carme",

year = "2012",

month = may,

day = "1",

doi = "10.1016/j.sse.2011.10.019",

language = "English",

volume = "71",

pages = "48--52",

journal = "Solid State-Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

AU - Conde, A.

AU - Jiménez, D.

AU - Miranda, E.

AU - Rafi, JM

AU - Campabadal, F.

AU - Suñé, J.

AU - Martinez Domingo, Carme

PY - 2012/5/1

Y1 - 2012/5/1

U2 - 10.1016/j.sse.2011.10.019

DO - 10.1016/j.sse.2011.10.019

M3 - Article

SN - 0038-1101

VL - 71

SP - 48

EP - 52

JO - Solid State-Electronics

JF - Solid State-Electronics

ER -