Modeling of the leakage current in ultrathin la2O3 films using a generalized power law equation

E. Miranda; H. Iwai

doi:10.1109/IPFA.2006.251051

Modeling of the leakage current in ultrathin la₂O₃ films using a generalized power law equation

E. Miranda^*, H. Iwai

^*Autor correspondiente de este trabajo

Departamento de Ingeniería Electrónica

Tokyo Institute of Technology

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

Resumen

The leakage current in electrically stressed MOS structures with ultrathin lanthanum oxide (La₂O₃) films was investigated. The samples were obtained by the electron-beam evaporation technique and annealed in-situ in ultrahigh vacuum conditions. We show that the application of successive voltage ramps leads to a set of current-voltage (I-V) characteristics that can be simulated using a power-law model with series and parallel resistances. This particular voltage dependence, in combination with the stepwise increase exhibited by the current-time (I-t) characteristic during a constant voltage stress, suggests that the leakage current through the oxide layer might be ascribed to multiple dielectric breakdown conduction.

Idioma original	Inglés
Páginas (desde-hasta)	306-310
Número de páginas	5
Publicación	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOI	https://doi.org/10.1109/IPFA.2006.251051
Estado	Publicada - 2006

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10.1109/IPFA.2006.251051

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