Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics

C. Martínez-Domingo; X. Saura; A. Conde; D. Jiménez; E. Miranda; J.M. Rafí; F. Campabadal; J. Suñé

doi:10.1016/j.mee.2011.03.132

Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics

C. Martínez-Domingo, X. Saura, A. Conde, D. Jiménez, E. Miranda, J.M. Rafí, F. Campabadal, J. Suñé

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación

15 Citas (Scopus)

Idioma original	Inglés
Páginas (desde-hasta)	1380-1383
Publicación	Microelectronic Engineering
Volumen	88
N.º	7
DOI	https://doi.org/10.1016/j.mee.2011.03.132
Estado	Publicada - 1 ene 2011

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10.1016/j.mee.2011.03.132

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title = "Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics",

author = "C. Mart{\'i}nez-Domingo and X. Saura and A. Conde and D. Jim{\'e}nez and E. Miranda and J.M. Raf{\'i} and F. Campabadal and J. Su{\~n}{\'e}",

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AU - Martínez-Domingo, C.

AU - Saura, X.

AU - Conde, A.

AU - Jiménez, D.

AU - Miranda, E.

AU - Rafí, J.M.

AU - Campabadal, F.

AU - Suñé, J.

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EP - 1383

JO - Microelectronic Engineering

JF - Microelectronic Engineering

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