In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Yuanyuan Shi; Yanfeng Ji; Fei Hui; Montserrat Nafria; Marc Porti; Gennadi Bersuker; Mario Lanza

doi:10.1002/aelm.201400058

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

13 Citas (Scopus)

Idioma original	Inglés
Número de artículo	1400058
Publicación	Advanced Electronic Materials
Volumen	1
N.º	4
DOI	https://doi.org/10.1002/aelm.201400058
Estado	Publicada - 1 ene 2015

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10.1002/aelm.201400058

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title = "In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories",

keywords = "conductive atomic force microscope, conductive filament, grain boundaries, mechanical stress, resistive switching",

author = "Yuanyuan Shi and Yanfeng Ji and Fei Hui and Montserrat Nafria and Marc Porti and Gennadi Bersuker and Mario Lanza",

year = "2015",

month = jan,

day = "1",

doi = "10.1002/aelm.201400058",

language = "English",

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journal = "Advanced Electronic Materials",

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T1 - In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

AU - Shi, Yuanyuan

AU - Ji, Yanfeng

AU - Hui, Fei

AU - Nafria, Montserrat

AU - Porti, Marc

AU - Bersuker, Gennadi

AU - Lanza, Mario

PY - 2015/1/1

Y1 - 2015/1/1

KW - conductive atomic force microscope

KW - conductive filament

KW - grain boundaries

KW - mechanical stress

KW - resistive switching

U2 - 10.1002/aelm.201400058

DO - 10.1002/aelm.201400058

M3 - Article

SN - 2199-160X

VL - 1

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 4

M1 - 1400058

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