Implanted and irradiated SiO2/Si structures electrical properties at the nanoscale

M. Porti, M. Nafría, S. Gerardin, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

Idioma original	Inglés
Páginas (desde-hasta)	421-425
Publicación	Journal of vacuum science & technology. B
Volumen	27
N.º	1
Estado	Publicada - 1 ene 2009

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title = "Implanted and irradiated SiO2/Si structures electrical properties at the nanoscale",

author = "M. Porti and M. Nafr{\'i}a and S. Gerardin and X. Aymerich and A. Cester and A. Paccagnella and G. Ghidini",

year = "2009",

month = jan,

day = "1",

language = "English",

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pages = "421--425",

journal = "Journal of vacuum science & technology. B",

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publisher = "American Institute of Physics",

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T1 - Implanted and irradiated SiO2/Si structures electrical properties at the nanoscale

AU - Porti, M.

AU - Nafría, M.

AU - Gerardin, S.

AU - Aymerich, X.

AU - Cester, A.

AU - Paccagnella, A.

AU - Ghidini, G.

PY - 2009/1/1

Y1 - 2009/1/1

M3 - Article

SN - 0734-211X

VL - 27

SP - 421

EP - 425

JO - Journal of vacuum science & technology. B

JF - Journal of vacuum science & technology. B

IS - 1

ER -