Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors

M. Saludes-Tapia; F. Campabadal; E. Miranda; M. B. González

doi:10.1016/j.sse.2023.108718

Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO₂/W memristors

M. Saludes-Tapia^*, F. Campabadal, E. Miranda, M. B. González

^*Autor correspondiente de este trabajo

Departamento de Ingeniería Electrónica

Campus UAB

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

1 Cita (Scopus)

Resumen

In this work, we investigate the effects related to the etching process of the W bottom electrode (BE) on the breakdown voltages and the resistive switching (RS) characteristics of TiN/Ti/HfO₂/W memristors. Two different W-BE etching processes are compared: anisotropic dry etching and isotropic wet etching. In order to complete the analysis, scanning electron microscope inspections are used to investigate the profile of the patterned BE. Finally, the hysteretic current–voltage (I-V) characteristics are simulated using the Dynamic Memdiode Model (DMM).

Idioma original	Inglés
Número de artículo	108718
Número de páginas	4
Publicación	SOLID-STATE ELECTRONICS
Volumen	207
DOI	https://doi.org/10.1016/j.sse.2023.108718
Estado	Publicada - sept 2023

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title = "Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors",

abstract = "In this work, we investigate the effects related to the etching process of the W bottom electrode (BE) on the breakdown voltages and the resistive switching (RS) characteristics of TiN/Ti/HfO2/W memristors. Two different W-BE etching processes are compared: anisotropic dry etching and isotropic wet etching. In order to complete the analysis, scanning electron microscope inspections are used to investigate the profile of the patterned BE. Finally, the hysteretic current–voltage (I-V) characteristics are simulated using the Dynamic Memdiode Model (DMM).",

keywords = "Breakdown voltage, Dry etching, HfO, Memristor, Resistive switching, W electrode, Wet etching",

author = "M. Saludes-Tapia and F. Campabadal and E. Miranda and Gonz{\'a}lez, {M. B.}",

note = "Publisher Copyright: {\textcopyright} 2023 The Author(s)",

year = "2023",

month = sep,

doi = "10.1016/j.sse.2023.108718",

language = "English",

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TY - JOUR

T1 - Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors

AU - Saludes-Tapia, M.

AU - Campabadal, F.

AU - Miranda, E.

AU - González, M. B.

PY - 2023/9

Y1 - 2023/9

N2 - In this work, we investigate the effects related to the etching process of the W bottom electrode (BE) on the breakdown voltages and the resistive switching (RS) characteristics of TiN/Ti/HfO2/W memristors. Two different W-BE etching processes are compared: anisotropic dry etching and isotropic wet etching. In order to complete the analysis, scanning electron microscope inspections are used to investigate the profile of the patterned BE. Finally, the hysteretic current–voltage (I-V) characteristics are simulated using the Dynamic Memdiode Model (DMM).

AB - In this work, we investigate the effects related to the etching process of the W bottom electrode (BE) on the breakdown voltages and the resistive switching (RS) characteristics of TiN/Ti/HfO2/W memristors. Two different W-BE etching processes are compared: anisotropic dry etching and isotropic wet etching. In order to complete the analysis, scanning electron microscope inspections are used to investigate the profile of the patterned BE. Finally, the hysteretic current–voltage (I-V) characteristics are simulated using the Dynamic Memdiode Model (DMM).

KW - Breakdown voltage

KW - Dry etching

KW - HfO

KW - Memristor

KW - Resistive switching

KW - W electrode

KW - Wet etching

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DO - 10.1016/j.sse.2023.108718

M3 - Article

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SN - 0038-1101

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JO - SOLID-STATE ELECTRONICS

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