Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

C. Valdivieso; A. Crespo-Yepes; R. Miranda; D. Bernal; J. Martin-Martinez; R. Rodriguez; M. Nafria

doi:10.1016/j.sse.2023.108625

Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

C. Valdivieso^*, A. Crespo-Yepes, R. Miranda, D. Bernal, J. Martin-Martinez, R. Rodriguez, M. Nafria

^*Autor correspondiente de este trabajo

Universitat Autònoma de Barcelona (UAB)

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In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that, in these devices, HCI and OFF-State are the most damaging aging mechanisms while N/PBTI stresses produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging introduces large leakage currents, largely distorting the I_D-V_G curves of the transistor.

Idioma original	Inglés
Número de artículo	108625
Número de páginas	5
Publicación	SOLID-STATE ELECTRONICS
Volumen	203
DOI	https://doi.org/10.1016/j.sse.2023.108625
Estado	Publicada - may 2023

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10.1016/j.sse.2023.108625

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title = "Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs",

abstract = "In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that, in these devices, HCI and OFF-State are the most damaging aging mechanisms while N/PBTI stresses produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging introduces large leakage currents, largely distorting the ID-VG curves of the transistor.",

keywords = "Aging, BTI, FD-SOI, HCI, NW-FETs, OFF-State, Reliability, Stress",

author = "C. Valdivieso and A. Crespo-Yepes and R. Miranda and D. Bernal and J. Martin-Martinez and R. Rodriguez and M. Nafria",

note = "Publisher Copyright: {\textcopyright} 2023",

year = "2023",

month = may,

doi = "10.1016/j.sse.2023.108625",

language = "English",

volume = "203",

journal = "SOLID-STATE ELECTRONICS",

issn = "0038-1101",

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TY - JOUR

T1 - Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

AU - Valdivieso, C.

AU - Crespo-Yepes, A.

AU - Miranda, R.

AU - Bernal, D.

AU - Martin-Martinez, J.

AU - Rodriguez, R.

AU - Nafria, M.

PY - 2023/5

Y1 - 2023/5

N2 - In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that, in these devices, HCI and OFF-State are the most damaging aging mechanisms while N/PBTI stresses produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging introduces large leakage currents, largely distorting the ID-VG curves of the transistor.

AB - In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that, in these devices, HCI and OFF-State are the most damaging aging mechanisms while N/PBTI stresses produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging introduces large leakage currents, largely distorting the ID-VG curves of the transistor.

KW - Aging

KW - BTI

KW - FD-SOI

KW - HCI

KW - NW-FETs

KW - OFF-State

KW - Reliability

KW - Stress

UR - http://www.scopus.com/inward/record.url?scp=85149362125&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2023.108625

DO - 10.1016/j.sse.2023.108625

M3 - Article

AN - SCOPUS:85149362125

SN - 0038-1101

VL - 203

JO - SOLID-STATE ELECTRONICS

JF - SOLID-STATE ELECTRONICS

M1 - 108625

ER -

Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

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