High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators

J. Verd; A. Uranga; G. Abadal; J. Teva; F. Pérez-Murano; N. Barniol

doi:10.1049/el:20071866

High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators

J. Verd, A. Uranga, G. Abadal, J. Teva, F. Pérez-Murano, N. Barniol

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

6 Citas (Scopus)

Resumen

A simple and high-sensitivity 0.35m CMOS readout circuit for resonant M/NEMS with capacitive sensing is presented. The proposed readout scheme presents an equivalent transimpedance gain of 140dBΩ (at 1MHz) and an input referred noise of 29nV/Hz1/2. Detection of submicrometre-scale cantilever vibrations in the MHz range is demonstrated with a displacement resolution of 33fm/Hz1/2. © The Institution of Engineering and Technology 2007.

Idioma original	Inglés
Páginas (desde-hasta)	1274-1276
Publicación	Electronics Letters
Volumen	43
DOI	https://doi.org/10.1049/el:20071866
Estado	Publicada - 19 nov 2007

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title = "High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators",

abstract = "A simple and high-sensitivity 0.35m CMOS readout circuit for resonant M/NEMS with capacitive sensing is presented. The proposed readout scheme presents an equivalent transimpedance gain of 140dBΩ (at 1MHz) and an input referred noise of 29nV/Hz1/2. Detection of submicrometre-scale cantilever vibrations in the MHz range is demonstrated with a displacement resolution of 33fm/Hz1/2. {\textcopyright} The Institution of Engineering and Technology 2007.",

author = "J. Verd and A. Uranga and G. Abadal and J. Teva and F. P{\'e}rez-Murano and N. Barniol",

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journal = "Electronics Letters",

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T1 - High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators

AU - Verd, J.

AU - Uranga, A.

AU - Abadal, G.

AU - Teva, J.

AU - Pérez-Murano, F.

AU - Barniol, N.

PY - 2007/11/19

Y1 - 2007/11/19

N2 - A simple and high-sensitivity 0.35m CMOS readout circuit for resonant M/NEMS with capacitive sensing is presented. The proposed readout scheme presents an equivalent transimpedance gain of 140dBΩ (at 1MHz) and an input referred noise of 29nV/Hz1/2. Detection of submicrometre-scale cantilever vibrations in the MHz range is demonstrated with a displacement resolution of 33fm/Hz1/2. © The Institution of Engineering and Technology 2007.

AB - A simple and high-sensitivity 0.35m CMOS readout circuit for resonant M/NEMS with capacitive sensing is presented. The proposed readout scheme presents an equivalent transimpedance gain of 140dBΩ (at 1MHz) and an input referred noise of 29nV/Hz1/2. Detection of submicrometre-scale cantilever vibrations in the MHz range is demonstrated with a displacement resolution of 33fm/Hz1/2. © The Institution of Engineering and Technology 2007.

U2 - 10.1049/el:20071866

DO - 10.1049/el:20071866

M3 - Article

SN - 0013-5194

VL - 43

SP - 1274

EP - 1276

JO - Electronics Letters

JF - Electronics Letters

ER -

High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators

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