Function-fit model for the soft breakdown failure mode

Enrique Miranda; Jordi Suñé; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich

doi:10.1109/55.767093

Function-fit model for the soft breakdown failure mode

Enrique Miranda, Jordi Suñé, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

87 Citas (Scopus)

Resumen

An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.

Idioma original	Inglés
Páginas (desde-hasta)	265-267
Publicación	IEEE Electron Device Letters
Volumen	20
DOI	https://doi.org/10.1109/55.767093
Estado	Publicada - 1 jun 1999

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title = "Function-fit model for the soft breakdown failure mode",

abstract = "An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.",

author = "Enrique Miranda and Jordi Su{\~n}{\'e} and Rosana Rodr{\'i}guez and Montserrat Nafr{\'i}a and Xavier Aymerich",

year = "1999",

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doi = "10.1109/55.767093",

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AU - Miranda, Enrique

AU - Suñé, Jordi

AU - Rodríguez, Rosana

AU - Nafría, Montserrat

AU - Aymerich, Xavier

PY - 1999/6/1

Y1 - 1999/6/1

N2 - An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.

AB - An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.

U2 - 10.1109/55.767093

DO - 10.1109/55.767093

M3 - Article

SN - 0741-3106

VL - 20

SP - 265

EP - 267

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Function-fit model for the soft breakdown failure mode

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