Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

F. Jimenez-Molinos; H. Garcia; M. B. Gonzalez; S. Duenas; H. Castan; E. Miranda; F. Campabadal; J. B. Roldan

doi:10.1109/CDE52135.2021.9455756

Fabrication, characterization and modeling of TiN/Ti/HfO₂/W memristors: Programming based on an external capacitor discharge

F. Jimenez-Molinos, H. Garcia, M. B. Gonzalez, S. Duenas, H. Castan, E. Miranda, F. Campabadal, J. B. Roldan

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

Resumen

Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.

Idioma original	Inglés
Páginas (desde-hasta)	74-77
Número de páginas	4
Publicación	Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
DOI	https://doi.org/10.1109/CDE52135.2021.9455756
Estado	Publicada - 9 jun 2021

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10.1109/CDE52135.2021.9455756

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Jimenez-Molinos, F., Garcia, H., Gonzalez, M. B., Duenas, S., Castan, H., Miranda, E., Campabadal, F., & Roldan, J. B. (2021). Fabrication, characterization and modeling of TiN/Ti/HfO₂/W memristors: Programming based on an external capacitor discharge. Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, 74-77. https://doi.org/10.1109/CDE52135.2021.9455756

@article{248dd686eab04c9087ec9ffc37e85648,

title = "Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge",

abstract = "Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.",

keywords = "capacitor, memristor, resistive-switching device, set/reset processes",

author = "F. Jimenez-Molinos and H. Garcia and Gonzalez, {M. B.} and S. Duenas and H. Castan and E. Miranda and F. Campabadal and Roldan, {J. B.}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.",

year = "2021",

month = jun,

day = "9",

doi = "10.1109/CDE52135.2021.9455756",

language = "English",

pages = "74--77",

}

Jimenez-Molinos, F, Garcia, H, Gonzalez, MB, Duenas, S, Castan, H, Miranda, E, Campabadal, F & Roldan, JB 2021, 'Fabrication, characterization and modeling of TiN/Ti/HfO₂/W memristors: Programming based on an external capacitor discharge', Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, pp. 74-77. https://doi.org/10.1109/CDE52135.2021.9455756

Fabrication, characterization and modeling of TiN/Ti/HfO₂/W memristors: Programming based on an external capacitor discharge. / Jimenez-Molinos, F.; Garcia, H.; Gonzalez, M. B. et al.
En: Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021, 09.06.2021, p. 74-77.

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

TY - JOUR

T1 - Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors

T2 - Programming based on an external capacitor discharge

AU - Jimenez-Molinos, F.

AU - Garcia, H.

AU - Gonzalez, M. B.

AU - Duenas, S.

AU - Castan, H.

AU - Miranda, E.

AU - Campabadal, F.

AU - Roldan, J. B.

PY - 2021/6/9

Y1 - 2021/6/9

N2 - Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.

AB - Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.

KW - capacitor

KW - memristor

KW - resistive-switching device

KW - set/reset processes

UR - http://www.scopus.com/inward/record.url?scp=85114416977&partnerID=8YFLogxK

U2 - 10.1109/CDE52135.2021.9455756

DO - 10.1109/CDE52135.2021.9455756

M3 - Article

AN - SCOPUS:85114416977

SP - 74

EP - 77

JO - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

JF - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

ER -