Exploring the field-effect control of breakdown paths in lateral W/HfO 2/W structures

X. Saura; X. Lian; D. Jimenez; E. Miranda; X. Borrise; J. M. Rafi; F. Campabadal; J. Sune

doi:10.1109/ULIS.2013.6523513

Exploring the field-effect control of breakdown paths in lateral W/HfO ₂/W structures

X. Saura, X. Lian, D. Jimenez, E. Miranda, X. Borrise, J. M. Rafi, F. Campabadal, J. Sune

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

Resumen

Metal nanogap test structures are used to demonstrate the field-effect control of the conduction through dielectric breakdown paths in W/HfO ₂/W structures. Variations of the size of the conducting filament in the nanogap are demonstrated by current compliance limited voltage ramps and by a partial reset method.

Idioma original	Inglés
Páginas (desde-hasta)	177-180
Número de páginas	4
Publicación	ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
DOI	https://doi.org/10.1109/ULIS.2013.6523513
Estado	Publicada - 2013

Acceder al documento

10.1109/ULIS.2013.6523513

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

Saura, X., Lian, X., Jimenez, D., Miranda, E., Borrise, X., Rafi, J. M., Campabadal, F., & Sune, J. (2013). Exploring the field-effect control of breakdown paths in lateral W/HfO ₂/W structures. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day', 177-180. https://doi.org/10.1109/ULIS.2013.6523513

@article{0767fa332a1741e792f385bd10ff396c,

title = "Exploring the field-effect control of breakdown paths in lateral W/HfO 2/W structures",

abstract = "Metal nanogap test structures are used to demonstrate the field-effect control of the conduction through dielectric breakdown paths in W/HfO 2/W structures. Variations of the size of the conducting filament in the nanogap are demonstrated by current compliance limited voltage ramps and by a partial reset method.",

author = "X. Saura and X. Lian and D. Jimenez and E. Miranda and X. Borrise and Rafi, {J. M.} and F. Campabadal and J. Sune",

year = "2013",

doi = "10.1109/ULIS.2013.6523513",

language = "English",

pages = "177--180",

}

Exploring the field-effect control of breakdown paths in lateral W/HfO ₂/W structures. / Saura, X.; Lian, X.; Jimenez, D. et al.
En: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day', 2013, p. 177-180.

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

TY - JOUR

T1 - Exploring the field-effect control of breakdown paths in lateral W/HfO 2/W structures

AU - Saura, X.

AU - Lian, X.

AU - Jimenez, D.

AU - Miranda, E.

AU - Borrise, X.

AU - Rafi, J. M.

AU - Campabadal, F.

AU - Sune, J.

PY - 2013

Y1 - 2013

N2 - Metal nanogap test structures are used to demonstrate the field-effect control of the conduction through dielectric breakdown paths in W/HfO 2/W structures. Variations of the size of the conducting filament in the nanogap are demonstrated by current compliance limited voltage ramps and by a partial reset method.

AB - Metal nanogap test structures are used to demonstrate the field-effect control of the conduction through dielectric breakdown paths in W/HfO 2/W structures. Variations of the size of the conducting filament in the nanogap are demonstrated by current compliance limited voltage ramps and by a partial reset method.

UR - http://www.scopus.com/inward/record.url?scp=84880314092&partnerID=8YFLogxK

U2 - 10.1109/ULIS.2013.6523513

DO - 10.1109/ULIS.2013.6523513

M3 - Article

AN - SCOPUS:84880314092

SP - 177

EP - 180

JO - ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

JF - ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

ER -