Explicit model for the gate tunneling current in double-gate MOSFETs

Ferney Chaves; David Jiménez; Jordi Suñé

doi:10.1016/j.sse.2011.11.003

Explicit model for the gate tunneling current in double-gate MOSFETs

Ferney Chaves, David Jiménez, Jordi Suñé

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

9 Citas (Scopus)

Resumen

In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal-oxide-semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schrödinger-Poisson (SP) equations has been performed to demonstrate the accuracy of the model. © 2011 Elsevier Ltd. All rights reserved.

Idioma original	Inglés
Páginas (desde-hasta)	93-97
Publicación	Solid-State Electronics
Volumen	68
DOI	https://doi.org/10.1016/j.sse.2011.11.003
Estado	Publicada - 1 feb 2012

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title = "Explicit model for the gate tunneling current in double-gate MOSFETs",

abstract = "In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal-oxide-semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schr{\"o}dinger-Poisson (SP) equations has been performed to demonstrate the accuracy of the model. {\textcopyright} 2011 Elsevier Ltd. All rights reserved.",

keywords = "Direct tunneling, Double-gate MOSFETs, Gate tunneling, Modeling quantization",

author = "Ferney Chaves and David Jim{\'e}nez and Jordi Su{\~n}{\'e}",

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AU - Jiménez, David

AU - Suñé, Jordi

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N2 - In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal-oxide-semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schrödinger-Poisson (SP) equations has been performed to demonstrate the accuracy of the model. © 2011 Elsevier Ltd. All rights reserved.

AB - In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal-oxide-semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schrödinger-Poisson (SP) equations has been performed to demonstrate the accuracy of the model. © 2011 Elsevier Ltd. All rights reserved.

KW - Direct tunneling

KW - Double-gate MOSFETs

KW - Gate tunneling

KW - Modeling quantization

U2 - 10.1016/j.sse.2011.11.003

DO - 10.1016/j.sse.2011.11.003

M3 - Article

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VL - 68

SP - 93

EP - 97

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Explicit model for the gate tunneling current in double-gate MOSFETs

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