Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO₂-based resistive switching memories

Keyphrases

• Compact Modeling 100%
• Resistive Random Access Memory (ReRAM) 100%
• HfO2 100%
• Conduction Characteristics 100%
• Series Resistance Effect 100%
• Extraction Methods 25%
• Series Resistance 25%
• I-V Curve 25%
• Valence Change Memory 25%
• Verilog 25%
• Memory Device 25%
• Resistance Value 25%
• Transition Voltage 25%
• Value Extraction 25%
• Stanford Model 25%
• Snapback 25%

Engineering

• Resistive 100%
• Resistive Random Access Memory 100%
• Series Resistance Effect 100%
• Random Access Memory Device 50%
• Series Resistance 50%
• Illustrates 50%
• Current-Voltage Characteristic 50%
• Isolation Method 50%

Material Science

• Resistive Random-Access Memory 100%
• Current-Voltage Characteristic 50%