Erratum: A simple drain current model for Schottky-barrier carbon nanotube field effect transistors (Nanotechnology 18 (025201))

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@article{205e57f054a849fd8259858d3edec3e6,

title = "Erratum: A simple drain current model for Schottky-barrier carbon nanotube field effect transistors (Nanotechnology 18 (025201))",

author = "D. Jim{\'e}nez and X. Cartoix{\`a} and E. Miranda and J. Su{\~n}{\'e} and Chaves, {F. A.} and S. Roche",

year = "2007",

month = oct,

day = "17",

doi = "10.1088/0957-4484/18/41/419001",

language = "English",

volume = "18",

journal = "Nanotechnology",

issn = "0957-4484",

number = "41",

}

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T1 - Erratum

T2 - A simple drain current model for Schottky-barrier carbon nanotube field effect transistors (Nanotechnology 18 (025201))

AU - Jiménez, D.

AU - Cartoixà, X.

AU - Miranda, E.

AU - Suñé, J.

AU - Chaves, F. A.

AU - Roche, S.

PY - 2007/10/17

Y1 - 2007/10/17

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U2 - 10.1088/0957-4484/18/41/419001

DO - 10.1088/0957-4484/18/41/419001

M3 - Article

AN - SCOPUS:34748845069

SN - 0957-4484

VL - 18

JO - Nanotechnology

JF - Nanotechnology

IS - 41

M1 - 419001

ER -