Engineering of the chemical reactivity of the Ti/HfO<inf>2</inf> interface for RRAM: Experiment and theory.

Pauline Calka, Malgorzata Sowinska, Thomas Bertaud, Damian Walczyk, Jarek Dabrowski, Peter Zaumseil, Christian Walczyk, Andrei Gloskovskii, Xavier Cartoixà, Jordi Suñé, Thomas Schroeder

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55 Citas (Scopus)

Resumen

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental-theoretical approach. Based on the use of oxygen-isotope marked HfO2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances. © 2014 American Chemical Society.
Idioma originalInglés
Páginas (desde-hasta)5056-5060
PublicaciónACS applied materials & interfaces
Volumen6
DOI
EstadoPublicada - 9 abr 2014

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