Electrically enhanced readout system for a high-frequency CMOS-MEMS resonator

Arantxa Uranga; Jaume Verd; Joan Lluis Lopez; Jordi Teva; Francesc Torres; Joan Josep Giner; Gonzalo Murillo; Gabriel Abadal; Nuria Barniol

doi:10.4218/etrij.09.0208.0380

Electrically enhanced readout system for a high-frequency CMOS-MEMS resonator

Arantxa Uranga, Jaume Verd, Joan Lluis Lopez, Jordi Teva, Francesc Torres, Joan Josep Giner, Gonzalo Murillo, Gabriel Abadal, Nuria Barniol

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

8 Citas (Scopus)

Resumen

The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 μm CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a 48×10⁸ resonant frequency-quality factor product (Q×f_res) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators.

Idioma original	Inglés
Páginas (desde-hasta)	478-480
Número de páginas	3
Publicación	ETRI Journal
Volumen	31
N.º	4
DOI	https://doi.org/10.4218/etrij.09.0208.0380
Estado	Publicada - 1 ago 2009

Acceder al documento

10.4218/etrij.09.0208.0380

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{9f1d58e11e134728b17686507d1c0295,

title = "Electrically enhanced readout system for a high-frequency CMOS-MEMS resonator",

abstract = "The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 μm CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a 48×108 resonant frequency-quality factor product (Q×fres) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators.",

keywords = "CMOS-MEMS, Clamped-clamped beam resonator, Differential readout amplifier, MEMS characterization",

author = "Arantxa Uranga and Jaume Verd and Lopez, {Joan Lluis} and Jordi Teva and Francesc Torres and Giner, {Joan Josep} and Gonzalo Murillo and Gabriel Abadal and Nuria Barniol",

year = "2009",

month = aug,

day = "1",

doi = "10.4218/etrij.09.0208.0380",

language = "English",

volume = "31",

pages = "478--480",

journal = "ETRI Journal",

issn = "1225-6463",

publisher = "ETRI",

number = "4",

}

TY - JOUR

T1 - Electrically enhanced readout system for a high-frequency CMOS-MEMS resonator

AU - Uranga, Arantxa

AU - Verd, Jaume

AU - Lopez, Joan Lluis

AU - Teva, Jordi

AU - Torres, Francesc

AU - Giner, Joan Josep

AU - Murillo, Gonzalo

AU - Abadal, Gabriel

AU - Barniol, Nuria

PY - 2009/8/1

Y1 - 2009/8/1

N2 - The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 μm CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a 48×108 resonant frequency-quality factor product (Q×fres) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators.

AB - The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 μm CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a 48×108 resonant frequency-quality factor product (Q×fres) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators.

KW - CMOS-MEMS

KW - Clamped-clamped beam resonator

KW - Differential readout amplifier

KW - MEMS characterization

UR - http://www.scopus.com/inward/record.url?scp=68949104340&partnerID=8YFLogxK

U2 - 10.4218/etrij.09.0208.0380

DO - 10.4218/etrij.09.0208.0380

M3 - Article

SN - 1225-6463

VL - 31

SP - 478

EP - 480

JO - ETRI Journal

JF - ETRI Journal

IS - 4

ER -

Electrically enhanced readout system for a high-frequency CMOS-MEMS resonator

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto