TY - JOUR
T1 - Effects of the localization of the charge in nanocrystal memory cells
AU - Gasperin, Alberto
AU - Amat, Esteve
AU - Porti, Marc
AU - Martín-Martínez, Javier
AU - Nafría, Montse
AU - Aymerich, Xavier
AU - Paccagnella, Alessandro
PY - 2009/9/17
Y1 - 2009/9/17
N2 - In this paper, we present a peculiar characteristic of nanocrystal (NC) memory (NCM) cells: The programming (P) windows measured in linear and subthreshold regions are different. A floating-gate Flash memory cell with a similar structure does not show the same behavior, and the P window (PW) is independent of the current level of the extrapolation, as expected. By performing 2-D TCAD simulations, we demonstrated that this characteristic of NCM cells is due to the localization of the charge into the NCs. We investigate the correlation between the difference of the PWs in linear and subthreshold regions and the number, width, and position of the NCs. © 2009 IEEE.
AB - In this paper, we present a peculiar characteristic of nanocrystal (NC) memory (NCM) cells: The programming (P) windows measured in linear and subthreshold regions are different. A floating-gate Flash memory cell with a similar structure does not show the same behavior, and the P window (PW) is independent of the current level of the extrapolation, as expected. By performing 2-D TCAD simulations, we demonstrated that this characteristic of NCM cells is due to the localization of the charge into the NCs. We investigate the correlation between the difference of the PWs in linear and subthreshold regions and the number, width, and position of the NCs. © 2009 IEEE.
KW - Charge trapping
KW - Flash memories
KW - Floating gate (FG)
KW - Nanocrystal (NC) memories (NCMs)
KW - Nonvolatile memories
KW - Simulations
KW - TCAD
U2 - 10.1109/TED.2009.2028404
DO - 10.1109/TED.2009.2028404
M3 - Article
SN - 0018-9383
VL - 56
SP - 2319
EP - 2326
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
ER -