Degradation of high-K La2O3 gate dielectrics using progressive electrical stress

E. Miranda, J. Molina, Y. Kim, H. Iwai

Producción científica: Contribución a una revista › Artículo › Investigación

18 Citas (Scopus)

Idioma original	Inglés
Páginas (desde-hasta)	1365-1369
Publicación	Microelectronics and Reliability
Volumen	45
DOI	https://doi.org/10.1016/j.microrel.2005.07.022
Estado	Publicada - 1 ene 2005

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title = "Degradation of high-K La2O3 gate dielectrics using progressive electrical stress",

author = "E. Miranda and J. Molina and Y. Kim and H. Iwai",

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T1 - Degradation of high-K La2O3 gate dielectrics using progressive electrical stress

AU - Miranda, E.

AU - Molina, J.

AU - Kim, Y.

AU - Iwai, H.

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