Continuous analytic I-V model for surrounding-gate MOSFETs

D. Jiménez; B. Iníguez; J. Suné; L. F. Marsal; J. Pallarès; J. Roig; D. Flores

doi:10.1109/LED.2004.831902

Continuous analytic I-V model for surrounding-gate MOSFETs

D. Jiménez, B. Iníguez, J. Suné, L. F. Marsal, J. Pallarès, J. Roig, D. Flores

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

290 Citas (Scopus)

Resumen

We present a continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs. It is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions (linear, saturation, subthreshold) and traces the transition between them without fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. We have demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages. © 2004 IEEE.

Idioma original	Inglés
Páginas (desde-hasta)	571-573
Publicación	IEEE Electron Device Letters
Volumen	25
DOI	https://doi.org/10.1109/LED.2004.831902
Estado	Publicada - 1 ago 2004

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title = "Continuous analytic I-V model for surrounding-gate MOSFETs",

abstract = "We present a continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs. It is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions (linear, saturation, subthreshold) and traces the transition between them without fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. We have demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages. {\textcopyright} 2004 IEEE.",

author = "D. Jim{\'e}nez and B. In{\'i}guez and J. Sun{\'e} and Marsal, {L. F.} and J. Pallar{\`e}s and J. Roig and D. Flores",

year = "2004",

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doi = "10.1109/LED.2004.831902",

language = "English",

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T1 - Continuous analytic I-V model for surrounding-gate MOSFETs

AU - Jiménez, D.

AU - Iníguez, B.

AU - Suné, J.

AU - Marsal, L. F.

AU - Pallarès, J.

AU - Roig, J.

AU - Flores, D.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - We present a continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs. It is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions (linear, saturation, subthreshold) and traces the transition between them without fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. We have demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages. © 2004 IEEE.

AB - We present a continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs. It is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions (linear, saturation, subthreshold) and traces the transition between them without fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. We have demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages. © 2004 IEEE.

U2 - 10.1109/LED.2004.831902

DO - 10.1109/LED.2004.831902

M3 - Article

SN - 0741-3106

VL - 25

SP - 571

EP - 573

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Continuous analytic I-V model for surrounding-gate MOSFETs

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