TY - JOUR
T1 - Compact Modeling of Complementary Resistive Switching Devices Using Memdiodes
AU - Miranda, Enrique A.
AU - Frohlich, Karol
PY - 2019/6/1
Y1 - 2019/6/1
N2 - © 1963-2012 IEEE. In spite of the apparent simplicity of the system under study, compact modeling of complementary resistive switching (CRS) devices, i.e., two antiserially connected memristive structures, is by no means straightforward. This requires a deep understanding of the voltage drops occurring across the circuit elements and correct treatment of the so-called snapback (SB) effect typical of the breakdown process of a thin dielectric film in an MIS or a MIM structure. The SB effect fundamentally consists in a sudden reduction of the device resistance caused by the formation of a filamentary path spanning the insulator. Beyond this point, the filament widens keeping the voltage drop across its extremes constant. The consequence of disregarding this effect is clearly distinguishable in the simulated curves: progressive openings of the on-state windows for both positive and negative voltages instead of abrupt ones. In this paper, a modification is introduced in the original memdiode model for memristive devices in order to account for this remarkable feature. Ta2O5-based CRS devices are considered to demonstrate the suitability of our approach.
AB - © 1963-2012 IEEE. In spite of the apparent simplicity of the system under study, compact modeling of complementary resistive switching (CRS) devices, i.e., two antiserially connected memristive structures, is by no means straightforward. This requires a deep understanding of the voltage drops occurring across the circuit elements and correct treatment of the so-called snapback (SB) effect typical of the breakdown process of a thin dielectric film in an MIS or a MIM structure. The SB effect fundamentally consists in a sudden reduction of the device resistance caused by the formation of a filamentary path spanning the insulator. Beyond this point, the filament widens keeping the voltage drop across its extremes constant. The consequence of disregarding this effect is clearly distinguishable in the simulated curves: progressive openings of the on-state windows for both positive and negative voltages instead of abrupt ones. In this paper, a modification is introduced in the original memdiode model for memristive devices in order to account for this remarkable feature. Ta2O5-based CRS devices are considered to demonstrate the suitability of our approach.
KW - CRS
KW - memristor
KW - MIM
KW - resistive switching (RS)
UR - http://www.mendeley.com/research/compact-modeling-complementary-resistive-switching-devices-using-memdiodes
U2 - 10.1109/TED.2019.2913322
DO - 10.1109/TED.2019.2913322
M3 - Article
SN - 0018-9383
VL - 66
SP - 2831
EP - 2836
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
M1 - 8706626
ER -