Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs

Oana Moldovan; Ferney A. Chaves; David Jiménez; Benjamin Iñiguez

doi:10.1016/j.sse.2008.06.056

Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs

Oana Moldovan, Ferney A. Chaves, David Jiménez, Benjamin Iñiguez

Departamento de Ingeniería Electrónica

Producción científica: Contribución a una revista › Artículo › Investigación › revisión exhaustiva

22 Citas (Scopus)

Resumen

We present an analytic, explicit and continuous charge model for a long-channel UTB (ultra-thin body) SOI (silicon-on-insulator) MOSFET, from which analytical expressions of the total capacitances are obtained. Our model is valid from below to well above threshold, without suffering from discontinuities between the regimes. It is based on a unified charge control model derived from Poisson's equation. The drain-current, charge and capacitances expressions result in continuous explicit functions of the applied bias. The calculated capacitance characteristics are validated by 2D numerical simulations showing a very good agreement for different silicon film thicknesses. © 2008 Elsevier Ltd. All rights reserved.

Idioma original	Inglés
Páginas (desde-hasta)	1867-1871
Publicación	Solid-State Electronics
Volumen	52
DOI	https://doi.org/10.1016/j.sse.2008.06.056
Estado	Publicada - 1 dic 2008

Acceder al documento

10.1016/j.sse.2008.06.056

Citar esto

@article{0dfa52c9ec5e4e60aa7f0ed006b4c8b8,

title = "Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs",

abstract = "We present an analytic, explicit and continuous charge model for a long-channel UTB (ultra-thin body) SOI (silicon-on-insulator) MOSFET, from which analytical expressions of the total capacitances are obtained. Our model is valid from below to well above threshold, without suffering from discontinuities between the regimes. It is based on a unified charge control model derived from Poisson's equation. The drain-current, charge and capacitances expressions result in continuous explicit functions of the applied bias. The calculated capacitance characteristics are validated by 2D numerical simulations showing a very good agreement for different silicon film thicknesses. {\textcopyright} 2008 Elsevier Ltd. All rights reserved.",

keywords = "Compact modeling, Double-gate MOSFET, Intrinsic capacitances, UTB SOI MOSFET",

author = "Oana Moldovan and Chaves, {Ferney A.} and David Jim{\'e}nez and Benjamin I{\~n}iguez",

year = "2008",

month = dec,

day = "1",

doi = "10.1016/j.sse.2008.06.056",

language = "English",

volume = "52",

pages = "1867--1871",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs

AU - Moldovan, Oana

AU - Chaves, Ferney A.

AU - Jiménez, David

AU - Iñiguez, Benjamin

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We present an analytic, explicit and continuous charge model for a long-channel UTB (ultra-thin body) SOI (silicon-on-insulator) MOSFET, from which analytical expressions of the total capacitances are obtained. Our model is valid from below to well above threshold, without suffering from discontinuities between the regimes. It is based on a unified charge control model derived from Poisson's equation. The drain-current, charge and capacitances expressions result in continuous explicit functions of the applied bias. The calculated capacitance characteristics are validated by 2D numerical simulations showing a very good agreement for different silicon film thicknesses. © 2008 Elsevier Ltd. All rights reserved.

AB - We present an analytic, explicit and continuous charge model for a long-channel UTB (ultra-thin body) SOI (silicon-on-insulator) MOSFET, from which analytical expressions of the total capacitances are obtained. Our model is valid from below to well above threshold, without suffering from discontinuities between the regimes. It is based on a unified charge control model derived from Poisson's equation. The drain-current, charge and capacitances expressions result in continuous explicit functions of the applied bias. The calculated capacitance characteristics are validated by 2D numerical simulations showing a very good agreement for different silicon film thicknesses. © 2008 Elsevier Ltd. All rights reserved.

KW - Compact modeling

KW - Double-gate MOSFET

KW - Intrinsic capacitances

KW - UTB SOI MOSFET

U2 - 10.1016/j.sse.2008.06.056

DO - 10.1016/j.sse.2008.06.056

M3 - Article

SN - 0038-1101

VL - 52

SP - 1867

EP - 1871

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs

Resumen

Acceder al documento

Huella

Citar esto