TY - JOUR
T1 - Common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction
AU - Miranda, E.
AU - Suñé, J.
AU - Rodríguez, R.
AU - Nafría, M.
AU - Aymerich, X.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - The soft and hard breakdown (SBD/HBD) conduction modes in ultrathin gate oxides based on the physics of mesoscopic conductors are investigated. It i shown that the Landauer approach applied to this system not only gives the observed HBD conductance values, which are those exposed for a ballistic constriction in the linear and nonlinear regimes, but also a plausible mechanism for the SBD conduction.
AB - The soft and hard breakdown (SBD/HBD) conduction modes in ultrathin gate oxides based on the physics of mesoscopic conductors are investigated. It i shown that the Landauer approach applied to this system not only gives the observed HBD conductance values, which are those exposed for a ballistic constriction in the linear and nonlinear regimes, but also a plausible mechanism for the SBD conduction.
U2 - 10.1016/S0167-9317(99)00364-0
DO - 10.1016/S0167-9317(99)00364-0
M3 - Article
SN - 0167-9317
VL - 48
SP - 171
EP - 174
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1
ER -