Comments on "postbreakdown current in MOS structures: Extraction of parameters using the integral difference function method"

Producción científica: Contribución a una revista › Artículo › Investigación

Idioma original	Inglés
Páginas (desde-hasta)	575-575
Publicación	IEEE trans. device mater. reliab.
Volumen	6
N.º	4
DOI	https://doi.org/10.1109/TDMR.2006.883945
Estado	Publicada - 1 dic 2006

Acceder al documento

@article{85c1e21e420943c0a30dc7df6c18faf1,

title = "Comments on {"}postbreakdown current in MOS structures: Extraction of parameters using the integral difference function method{"}",

author = "S. Nadarajah and E. Miranda",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/TDMR.2006.883945",

language = "English",

volume = "6",

pages = "575--575",

journal = "IEEE trans. device mater. reliab.",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Comments on "postbreakdown current in MOS structures: Extraction of parameters using the integral difference function method"

AU - Nadarajah, S.

AU - Miranda, E.

PY - 2006/12/1

Y1 - 2006/12/1

U2 - 10.1109/TDMR.2006.883945

DO - 10.1109/TDMR.2006.883945

M3 - Article

SN - 1530-4388

VL - 6

SP - 575

EP - 575

JO - IEEE trans. device mater. reliab.

JF - IEEE trans. device mater. reliab.

IS - 4

ER -