Comment on New Current-Voltage Model for Surrounding-Gate Metal-Oxide-Semiconductor Field Effect Transistors

D. Jiménez, B. Iñíguez, J. Suñé, L. F. Marsal, J. Pallarès, J. Roig, and D. Flores

Producción científica: Contribución a una revista › Artículo › Investigación

Idioma original	Inglés
Páginas (desde-hasta)	6057-6057
Publicación	Japanese Journal of Applied Physics
Volumen	45
Estado	Publicada - 1 ene 2006

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title = "Comment on New Current-Voltage Model for Surrounding-Gate Metal-Oxide-Semiconductor Field Effect Transistors",

author = "D. Jim{\'e}nez and B. I{\~n}{\'i}guez and J. Su{\~n}{\'e} and Marsal, {L. F.} and J. Pallar{\`e}s and J. Roig and Flores, {and D.}",

year = "2006",

month = jan,

day = "1",

language = "English",

volume = "45",

pages = "6057--6057",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Comment on New Current-Voltage Model for Surrounding-Gate Metal-Oxide-Semiconductor Field Effect Transistors

AU - Jiménez, D.

AU - Iñíguez, B.

AU - Suñé, J.

AU - Marsal, L. F.

AU - Pallarès, J.

AU - Roig, J.

AU - Flores, and D.

PY - 2006/1/1

Y1 - 2006/1/1

M3 - Article

SN - 0021-4922

VL - 45

SP - 6057

EP - 6057

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

ER -