CMOS-MEMS switches based on back-end metal layers

Producción científica: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

12 Citas (Scopus)

Resumen

In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24 mV/decade M4 configuration and 5 mV/decade stack approach) and good ION/I OFF ratio (1x102 M4 configuration and 1x103 stack switch). © 2014 Published by Elsevier B.V.
Idioma originalInglés
Páginas (desde-hasta)127-130
PublicaciónMicroelectronic Engineering
Volumen119
DOI
EstadoPublicada - 1 may 2014

Huella

Profundice en los temas de investigación de 'CMOS-MEMS switches based on back-end metal layers'. En conjunto forman una huella única.

Citar esto